/**
******************************************************************************
* @file stm32f7xx_hal_flash_ex.c
* @author MCD Application Team
* @version V1.1.0
* @date 22-April-2016
* @brief Extended FLASH HAL module driver.
* This file provides firmware functions to manage the following
* functionalities of the FLASH extension peripheral:
* + Extended programming operations functions
*
@verbatim
==============================================================================
##### Flash Extension features #####
==============================================================================
[..] Comparing to other previous devices, the FLASH interface for STM32F76xx/STM32F77xx
devices contains the following additional features
(+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write
capability (RWW)
(+) Dual bank memory organization
(+) Dual boot mode
##### How to use this driver #####
==============================================================================
[..] This driver provides functions to configure and program the FLASH memory
of all STM32F7xx devices. It includes
(#) FLASH Memory Erase functions:
(++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and
HAL_FLASH_Lock() functions
(++) Erase function: Erase sector, erase all sectors
(++) There are two modes of erase :
(+++) Polling Mode using HAL_FLASHEx_Erase()
(+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
(#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
(++) Set/Reset the write protection
(++) Set the Read protection Level
(++) Set the BOR level
(++) Program the user Option Bytes
@endverbatim
******************************************************************************
* @attention
*
* <h2><center>© COPYRIGHT(c) 2016 STMicroelectronics</center></h2>
*
* Redistribution and use in source and binary forms, with or without modification,
* are permitted provided that the following conditions are met:
* 1. Redistributions of source code must retain the above copyright notice,
* this list of conditions and the following disclaimer.
* 2. Redistributions in binary form must reproduce the above copyright notice,
* this list of conditions and the following disclaimer in the documentation
* and/or other materials provided with the distribution.
* 3. Neither the name of STMicroelectronics nor the names of its contributors
* may be used to endorse or promote products derived from this software
* without specific prior written permission.
*
* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
* AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
* IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
* DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
* FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
* DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
* SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
* CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
* OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
* OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
*
******************************************************************************
*/
/* Includes ------------------------------------------------------------------*/
#include "stm32f7xx_hal.h"
/** @addtogroup STM32F7xx_HAL_Driver
* @{
*/
/** @defgroup FLASHEx FLASHEx
* @brief FLASH HAL Extension module driver
* @{
*/
#ifdef HAL_FLASH_MODULE_ENABLED
/* Private typedef -----------------------------------------------------------*/
/* Private define ------------------------------------------------------------*/
/** @addtogroup FLASHEx_Private_Constants
* @{
*/
#define SECTOR_MASK ((uint32_t)0xFFFFFF07)
#define FLASH_TIMEOUT_VALUE ((uint32_t)50000)/* 50 s */
/**
* @}
*/
/* Private macro -------------------------------------------------------------*/
/* Private variables ---------------------------------------------------------*/
/** @addtogroup FLASHEx_Private_Variables
* @{
*/
extern FLASH_ProcessTypeDef pFlash;
/**
* @}
*/
/* Private function prototypes -----------------------------------------------*/
/** @addtogroup FLASHEx_Private_Functions
* @{
*/
/* Option bytes control */
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector);
static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector);
static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level);
static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level);
static HAL_StatusTypeDef FLASH_OB_BootAddressConfig(uint32_t BootOption, uint32_t Address);
static uint32_t FLASH_OB_GetUser(void);
static uint32_t FLASH_OB_GetWRP(void);
static uint8_t FLASH_OB_GetRDP(void);
static uint32_t FLASH_OB_GetBOR(void);
static uint32_t FLASH_OB_GetBootAddress(uint32_t BootOption);
#if defined (FLASH_OPTCR_nDBANK)
static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks);
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint32_t Wwdg, uint32_t Iwdg, uint32_t Stop, uint32_t Stdby, uint32_t Iwdgstop, \
uint32_t Iwdgstdby, uint32_t NDBank, uint32_t NDBoot);
#else
static void FLASH_MassErase(uint8_t VoltageRange);
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint32_t Wwdg, uint32_t Iwdg, uint32_t Stop, uint32_t Stdby, uint32_t Iwdgstop, uint32_t Iwdgstdby);
#endif /* FLASH_OPTCR_nDBANK */
extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout);
/**
* @}
*/
/* Exported functions --------------------------------------------------------*/
/** @defgroup FLASHEx_Exported_Functions FLASHEx Exported Functions
* @{
*/
/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions
* @brief Extended IO operation functions
*
@verbatim
===============================================================================
##### Extended programming operation functions #####
===============================================================================
[..]
This subsection provides a set of functions allowing to manage the Extension FLASH
programming operations Operations.
@endverbatim
* @{
*/
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors
* @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] SectorError: pointer to variable that
* contains the configuration information on faulty sector in case of error
* (0xFFFFFFFF means that all the sectors have been correctly erased)
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
HAL_StatusTypeDef status = HAL_ERROR;
uint32_t index = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
/*Initialization of SectorError variable*/
*SectorError = 0xFFFFFFFFU;
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
#if defined (FLASH_OPTCR_nDBANK)
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
#else
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange);
#endif /* FLASH_OPTCR_nDBANK */
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
/* if the erase operation is completed, disable the MER Bit */
FLASH->CR &= (~FLASH_MER_BIT);
}
else
{
/* Check the parameters */
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
/* Erase by sector by sector to be done*/
for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
{
FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the SER Bit and SNB Bits */
CLEAR_BIT(FLASH->CR, (FLASH_CR_SER | FLASH_CR_SNB));
if(status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty sector*/
*SectorError = index;
break;
}
}
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
* @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
/* Enable End of FLASH Operation interrupt */
__HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
/* Enable Error source interrupt */
__HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
/* Clear pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_ERSERR);
if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
#if defined (FLASH_OPTCR_nDBANK)
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
#else
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange);
#endif /* FLASH_OPTCR_nDBANK */
}
else
{
/* Erase by sector to be done*/
/* Check the parameters */
assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
pFlash.NbSectorsToErase = pEraseInit->NbSectors;
pFlash.Sector = pEraseInit->Sector;
pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
/*Erase 1st sector and wait for IT*/
FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
}
return status;
}
/**
* @brief Program option bytes
* @param pOBInit: pointer to an FLASH_OBInitStruct structure that
* contains the configuration information for the programming.
*
* @retval HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
{
HAL_StatusTypeDef status = HAL_ERROR;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
/* Write protection configuration */
if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
{
assert_param(IS_WRPSTATE(pOBInit->WRPState));
if(pOBInit->WRPState == OB_WRPSTATE_ENABLE)
{
/*Enable of Write protection on the selected Sector*/
status = FLASH_OB_EnableWRP(pOBInit->WRPSector);
}
else
{
/*Disable of Write protection on the selected Sector*/
status = FLASH_OB_DisableWRP(pOBInit->WRPSector);
}
}
/* Read protection configuration */
if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
{
status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
}
/* USER configuration */
if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
{
#if defined (FLASH_OPTCR_nDBANK)
status = FLASH_OB_UserConfig(pOBInit->USERConfig & OB_WWDG_SW,
pOBInit->USERConfig & OB_IWDG_SW,
pOBInit->USERConfig & OB_STOP_NO_RST,
pOBInit->USERConfig & OB_STDBY_NO_RST,
pOBInit->USERConfig & OB_IWDG_STOP_ACTIVE,
pOBInit->USERConfig & OB_IWDG_STDBY_ACTIVE,
pOBInit->USERConfig & OB_NDBANK_SINGLE_BANK,
pOBInit->USERConfig & OB_DUAL_BOOT_DISABLE);
#else
status = FLASH_OB_UserConfig(pOBInit->USERConfig & OB_WWDG_SW,
pOBInit->USERConfig & OB_IWDG_SW,
pOBInit->USERConfig & OB_STOP_NO_RST,
pOBInit->USERConfig & OB_STDBY_NO_RST,
pOBInit->USERConfig & OB_IWDG_STOP_ACTIVE,
pOBInit->USERConfig & OB_IWDG_STDBY_ACTIVE);
#endif /* FLASH_OPTCR_nDBANK */
}
/* BOR Level configuration */
if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
{
status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
}
/* Boot 0 Address configuration */
if((pOBInit->OptionType & OPTIONBYTE_BOOTADDR_0) == OPTIONBYTE_BOOTADDR_0)
{
status = FLASH_OB_BootAddressConfig(OPTIONBYTE_BOOTADDR_0, pOBInit->BootAddr0);
}
/* Boot 1 Address configuration */
if((pOBInit->OptionType & OPTIONBYTE_BOOTADDR_1) == OPTIONBYTE_BOOTADDR_1)
{
status = FLASH_OB_BootAddressConfig(OPTIONBYTE_BOOTADDR_1, pOBInit->BootAddr1);
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Get the Option byte configuration
* @param pOBInit: pointer to an FLASH_OBInitStruct structure that
* contains the configuration information for the programming.
*
* @retval None
*/
void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
{
pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER |\
OPTIONBYTE_BOR | OPTIONBYTE_BOOTADDR_0 | OPTIONBYTE_BOOTADDR_1;
/*Get WRP*/
pOBInit->WRPSector = FLASH_OB_GetWRP();
/*Get RDP Level*/
pOBInit->RDPLevel = FLASH_OB_GetRDP();
/*Get USER*/
pOBInit->USERConfig = FLASH_OB_GetUser();
/*Get BOR Level*/
pOBInit->BORLevel = FLASH_OB_GetBOR();
/*Get Boot Address when Boot pin = 0 */
pOBInit->BootAddr0 = FLASH_OB_GetBootAddress(OPTIONBYTE_BOOTADDR_0);
/*Get Boot Address when Boot pin = 1 */
pOBInit->BootAddr1 = FLASH_OB_GetBootAddress(OPTIONBYTE_BOOTADDR_1);
}
/**
* @}
*/
#if defined (FLASH_OPTCR_nDBANK)
/**
* @brief Full erase of FLASH memory sectors
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
* @param Banks: Banks to be erased
* This parameter can be one of the following values:
* @arg FLASH_BANK_1: Bank1 to be erased
* @arg FLASH_BANK_2: Bank2 to be erased
* @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
*
* @retval HAL Status
*/
static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
{
/* Check the parameters */
assert_param(IS_VOLTAGERANGE(VoltageRange));
assert_param(IS_FLASH_BANK(Banks));
/* if the previous operation is completed, proceed to erase all sectors */
FLASH->CR &= CR_PSIZE_MASK;
if(Banks == FLASH_BANK_BOTH)
{
/* bank1 & bank2 will be erased*/
FLASH->CR |= FLASH_MER_BIT;
}
else if(Banks == FLASH_BANK_2)
{
/*Only bank2 will be erased*/
FLASH->CR |= FLASH_CR_MER2;
}
else
{
/*Only bank1 will be erased*/
FLASH->CR |= FLASH_CR_MER1;
}
FLASH->CR |= FLASH_CR_STRT | ((uint32_t)VoltageRange <<8);
/* Data synchronous Barrier (DSB) Just after the write operation
This will force the CPU to respect the sequence of instruction (no optimization).*/
__DSB();
}
/**
* @brief Erase the specified FLASH memory sector
* @param Sector: FLASH sector to erase
* The value of this parameter depend on device used within the same series
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
if(Sector > FLASH_SECTOR_11)
{
Sector += 4;
}
/* If the previous operation is completed, proceed to erase the sector */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
FLASH->CR |= FLASH_CR_STRT;
/* Data synchronous Barrier (DSB) Just after the write operation
This will force the CPU to respect the sequence of instruction (no optimization).*/
__DSB();
}
/**
* @brief Return the FLASH Write Protection Option Bytes value.
* @retval uint32_t FLASH Write Protection Option Bytes value
*/
static uint32_t FLASH_OB_GetWRP(void)
{
/* Return the FLASH write protection Register value */
return ((uint32_t)(FLASH->OPTCR & 0x0FFF0000));
}
/**
* @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
* @param Wwdg: Selects the IWDG mode
* This parameter can be one of the following values:
* @arg OB_WWDG_SW: Software WWDG selected
* @arg OB_WWDG_HW: Hardware WWDG selected
* @param Iwdg: Selects the WWDG mode
* This parameter can be one of the following values:
* @arg OB_IWDG_SW: Software IWDG selected
* @arg OB_IWDG_HW: Hardware IWDG selected
* @param Stop: Reset event when entering STOP mode.
* This parameter can be one of the following values:
* @arg OB_STOP_NO_RST: No reset generated when entering in STOP
* @arg OB_STOP_RST: Reset generated when entering in STOP
* @param Stdby: Reset event when entering Standby mode.
* This parameter can be one of the following values:
* @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
* @arg OB_STDBY_RST: Reset generated when entering in STANDBY
* @param Iwdgstop: Independent watchdog counter freeze in Stop mode.
* This parameter can be one of the following values:
* @arg OB_IWDG_STOP_FREEZE: Freeze IWDG counter in STOP
* @arg OB_IWDG_STOP_ACTIVE: IWDG counter active in STOP
* @param Iwdgstdby: Independent watchdog counter freeze in standby mode.
* This parameter can be one of the following values:
* @arg OB_IWDG_STDBY_FREEZE: Freeze IWDG counter in STANDBY
* @arg OB_IWDG_STDBY_ACTIVE: IWDG counter active in STANDBY
* @param NDBank: Flash Single Bank mode enabled.
* This parameter can be one of the following values:
* @arg OB_NDBANK_SINGLE_BANK: enable 256 bits mode (Flash is a single bank)
* @arg OB_NDBANK_DUAL_BANK: disable 256 bits mode (Flash is a dual bank in 128 bits mode)
* @param NDBoot: Flash Dual boot mode disable.
* This parameter can be one of the following values:
* @arg OB_DUAL_BOOT_DISABLE: Disable Dual Boot
* @arg OB_DUAL_BOOT_ENABLE: Enable Dual Boot
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint32_t Wwdg, uint32_t Iwdg, uint32_t Stop, uint32_t Stdby, uint32_t Iwdgstop, \
uint32_t Iwdgstdby, uint32_t NDBank, uint32_t NDBoot)
{
uint32_t useroptionmask = 0x00;
uint32_t useroptionvalue = 0x00;
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WWDG_SOURCE(Wwdg));
assert_param(IS_OB_IWDG_SOURCE(Iwdg));
assert_param(IS_OB_STOP_SOURCE(Stop));
assert_param(IS_OB_STDBY_SOURCE(Stdby));
assert_param(IS_OB_IWDG_STOP_FREEZE(Iwdgstop));
assert_param(IS_OB_IWDG_STDBY_FREEZE(Iwdgstdby));
assert_param(IS_OB_NDBANK(NDBank));
assert_param(IS_OB_NDBOOT(NDBoot));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
useroptionmask = (FLASH_OPTCR_WWDG_SW | FLASH_OPTCR_IWDG_SW | FLASH_OPTCR_nRST_STOP | \
FLASH_OPTCR_nRST_STDBY | FLASH_OPTCR_IWDG_STOP | FLASH_OPTCR_IWDG_STDBY | \
FLASH_OPTCR_nDBOOT | FLASH_OPTCR_nDBANK);
useroptionvalue = (Iwdg | Wwdg | Stop | Stdby | Iwdgstop | Iwdgstdby | NDBoot | NDBank);
/* Update User Option Byte */
MODIFY_REG(FLASH->OPTCR, useroptionmask, useroptionvalue);
}
return status;
}
/**
* @brief Return the FLASH User Option Byte value.
* @retval uint32_t FLASH User Option Bytes values: WWDG_SW(Bit4), IWDG_SW(Bit5), nRST_STOP(Bit6),
* nRST_STDBY(Bit7), nDBOOT(Bit28), nDBANK(Bit29), IWDG_STDBY(Bit30) and IWDG_STOP(Bit31).
*/
static uint32_t FLASH_OB_GetUser(void)
{
/* Return the User Option Byte */
return ((uint32_t)(FLASH->OPTCR & 0xF00000F0U));
}
#else
/**
* @brief Full erase of FLASH memory sectors
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval HAL Status
*/
static void FLASH_MassErase(uint8_t VoltageRange)
{
/* Check the parameters */
assert_param(IS_VOLTAGERANGE(VoltageRange));
/* if the previous operation is completed, proceed to erase all sectors */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= FLASH_CR_MER;
FLASH->CR |= FLASH_CR_STRT | ((uint32_t)VoltageRange <<8);
/* Data synchronous Barrier (DSB) Just after the write operation
This will force the CPU to respect the sequence of instruction (no optimization).*/
__DSB();
}
/**
* @brief Erase the specified FLASH memory sector
* @param Sector: FLASH sector to erase
* The value of this parameter depend on device used within the same series
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* If the previous operation is completed, proceed to erase the sector */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR &= SECTOR_MASK;
FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
FLASH->CR |= FLASH_CR_STRT;
/* Data synchronous Barrier (DSB) Just after the write operation
This will force the CPU to respect the sequence of instruction (no optimization).*/
__DSB();
}
/**
* @brief Return the FLASH Write Protection Option Bytes value.
* @retval uint32_t FLASH Write Protection Option Bytes value
*/
static uint32_t FLASH_OB_GetWRP(void)
{
/* Return the FLASH write protection Register value */
return ((uint32_t)(FLASH->OPTCR & 0x00FF0000));
}
/**
* @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
* @param Wwdg: Selects the IWDG mode
* This parameter can be one of the following values:
* @arg OB_WWDG_SW: Software WWDG selected
* @arg OB_WWDG_HW: Hardware WWDG selected
* @param Iwdg: Selects the WWDG mode
* This parameter can be one of the following values:
* @arg OB_IWDG_SW: Software IWDG selected
* @arg OB_IWDG_HW: Hardware IWDG selected
* @param Stop: Reset event when entering STOP mode.
* This parameter can be one of the following values:
* @arg OB_STOP_NO_RST: No reset generated when entering in STOP
* @arg OB_STOP_RST: Reset generated when entering in STOP
* @param Stdby: Reset event when entering Standby mode.
* This parameter can be one of the following values:
* @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
* @arg OB_STDBY_RST: Reset generated when entering in STANDBY
* @param Iwdgstop: Independent watchdog counter freeze in Stop mode.
* This parameter can be one of the following values:
* @arg OB_IWDG_STOP_FREEZE: Freeze IWDG counter in STOP
* @arg OB_IWDG_STOP_ACTIVE: IWDG counter active in STOP
* @param Iwdgstdby: Independent watchdog counter freeze in standby mode.
* This parameter can be one of the following values:
* @arg OB_IWDG_STDBY_FREEZE: Freeze IWDG counter in STANDBY
* @arg OB_IWDG_STDBY_ACTIVE: IWDG counter active in STANDBY
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint32_t Wwdg, uint32_t Iwdg, uint32_t Stop, uint32_t Stdby, uint32_t Iwdgstop, uint32_t Iwdgstdby)
{
uint32_t useroptionmask = 0x00;
uint32_t useroptionvalue = 0x00;
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WWDG_SOURCE(Wwdg));
assert_param(IS_OB_IWDG_SOURCE(Iwdg));
assert_param(IS_OB_STOP_SOURCE(Stop));
assert_param(IS_OB_STDBY_SOURCE(Stdby));
assert_param(IS_OB_IWDG_STOP_FREEZE(Iwdgstop));
assert_param(IS_OB_IWDG_STDBY_FREEZE(Iwdgstdby));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
useroptionmask = (FLASH_OPTCR_WWDG_SW | FLASH_OPTCR_IWDG_SW | FLASH_OPTCR_nRST_STOP | \
FLASH_OPTCR_nRST_STDBY | FLASH_OPTCR_IWDG_STOP | FLASH_OPTCR_IWDG_STDBY);
useroptionvalue = (Iwdg | Wwdg | Stop | Stdby | Iwdgstop | Iwdgstdby);
/* Update User Option Byte */
MODIFY_REG(FLASH->OPTCR, useroptionmask, useroptionvalue);
}
return status;
}
/**
* @brief Return the FLASH User Option Byte value.
* @retval uint32_t FLASH User Option Bytes values: WWDG_SW(Bit4), IWDG_SW(Bit5), nRST_STOP(Bit6),
* nRST_STDBY(Bit7), IWDG_STDBY(Bit30) and IWDG_STOP(Bit31).
*/
static uint32_t FLASH_OB_GetUser(void)
{
/* Return the User Option Byte */
return ((uint32_t)(FLASH->OPTCR & 0xC00000F0));
}
#endif /* FLASH_OPTCR_nDBANK */
/**
* @brief Enable the write protection of the desired bank1 or bank2 sectors
*
* @note When the memory read protection level is selected (RDP level = 1),
* it is not possible to program or erase the flash sector i if CortexM7
* debug features are connected or boot code is executed in RAM, even if nWRPi = 1
*
* @param WRPSector: specifies the sector(s) to be write protected.
* This parameter can be one of the following values:
* @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_7 (for STM32F74xxx/STM32F75xxx devices)
* or a value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_11 (in Single Bank mode for STM32F76xxx/STM32F77xxx devices)
* or a value between OB_WRP_DB_SECTOR_0 and OB_WRP_DB_SECTOR_23 (in Dual Bank mode for STM32F76xxx/STM32F77xxx devices)
* @arg OB_WRP_SECTOR_All
*
* @retval HAL FLASH State
*/
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WRP_SECTOR(WRPSector));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
/*Write protection enabled on sectors */
FLASH->OPTCR &= (~WRPSector);
}
return status;
}
/**
* @brief Disable the write protection of the desired bank1 or bank 2 sectors
*
* @note When the memory read protection level is selected (RDP level = 1),
* it is not possible to program or erase the flash sector i if CortexM4
* debug features are connected or boot code is executed in RAM, even if nWRPi = 1
*
* @param WRPSector: specifies the sector(s) to be write protected.
* This parameter can be one of the following values:
* @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_7 (for STM32F74xxx/STM32F75xxx devices)
* or a value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_11 (in Single Bank mode for STM32F76xxx/STM32F77xxx devices)
* or a value between OB_WRP_DB_SECTOR_0 and OB_WRP_DB_SECTOR_23 (in Dual Bank mode for STM32F76xxx/STM32F77xxx devices)
* @arg OB_WRP_Sector_All
*
*
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WRP_SECTOR(WRPSector));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
/* Write protection disabled on sectors */
FLASH->OPTCR |= (WRPSector);
}
return status;
}
/**
* @brief Set the read protection level.
* @param Level: specifies the read protection level.
* This parameter can be one of the following values:
* @arg OB_RDP_LEVEL_0: No protection
* @arg OB_RDP_LEVEL_1: Read protection of the memory
* @arg OB_RDP_LEVEL_2: Full chip protection
*
* @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
*
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_RDP_LEVEL(Level));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
*(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
}
return status;
}
/**
* @brief Set the BOR Level.
* @param Level: specifies the Option Bytes BOR Reset Level.
* This parameter can be one of the following values:
* @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
* @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
* @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
* @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
{
/* Check the parameters */
assert_param(IS_OB_BOR_LEVEL(Level));
/* Set the BOR Level */
MODIFY_REG(FLASH->OPTCR, FLASH_OPTCR_BOR_LEV, Level);
return HAL_OK;
}
/**
* @brief Configure Boot base address.
*
* @param BootOption : specifies Boot base address depending from Boot pin = 0 or pin = 1
* This parameter can be one of the following values:
* @arg OPTIONBYTE_BOOTADDR_0 : Boot address based when Boot pin = 0
* @arg OPTIONBYTE_BOOTADDR_1 : Boot address based when Boot pin = 1
* @param Address: specifies Boot base address
* This parameter can be one of the following values:
* @arg OB_BOOTADDR_ITCM_RAM : Boot from ITCM RAM (0x00000000)
* @arg OB_BOOTADDR_SYSTEM : Boot from System memory bootloader (0x00100000)
* @arg OB_BOOTADDR_ITCM_FLASH : Boot from Flash on ITCM interface (0x00200000)
* @arg OB_BOOTADDR_AXIM_FLASH : Boot from Flash on AXIM interface (0x08000000)
* @arg OB_BOOTADDR_DTCM_RAM : Boot from DTCM RAM (0x20000000)
* @arg OB_BOOTADDR_SRAM1 : Boot from SRAM1 (0x20010000)
* @arg OB_BOOTADDR_SRAM2 : Boot from SRAM2 (0x2004C000)
*
* @retval HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_BootAddressConfig(uint32_t BootOption, uint32_t Address)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_BOOT_ADDRESS(Address));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
if(BootOption == OPTIONBYTE_BOOTADDR_0)
{
MODIFY_REG(FLASH->OPTCR1, FLASH_OPTCR1_BOOT_ADD0, Address);
}
else
{
MODIFY_REG(FLASH->OPTCR1, FLASH_OPTCR1_BOOT_ADD1, (Address << 16));
}
}
return status;
}
/**
* @brief Returns the FLASH Read Protection level.
* @retval FlagStatus FLASH ReadOut Protection Status:
* This parameter can be one of the following values:
* @arg OB_RDP_LEVEL_0: No protection
* @arg OB_RDP_LEVEL_1: Read protection of the memory
* @arg OB_RDP_LEVEL_2: Full chip protection
*/
static uint8_t FLASH_OB_GetRDP(void)
{
uint8_t readstatus = OB_RDP_LEVEL_0;
if ((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS)) == OB_RDP_LEVEL_0)
{
readstatus = OB_RDP_LEVEL_0;
}
else if ((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS)) == OB_RDP_LEVEL_2)
{
readstatus = OB_RDP_LEVEL_2;
}
else
{
readstatus = OB_RDP_LEVEL_1;
}
return readstatus;
}
/**
* @brief Returns the FLASH BOR level.
* @retval uint32_t The FLASH BOR level:
* - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
* - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
* - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
* - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V
*/
static uint32_t FLASH_OB_GetBOR(void)
{
/* Return the FLASH BOR level */
return ((uint32_t)(FLASH->OPTCR & 0x0C));
}
/**
* @brief Configure Boot base address.
*
* @param BootOption : specifies Boot base address depending from Boot pin = 0 or pin = 1
* This parameter can be one of the following values:
* @arg OPTIONBYTE_BOOTADDR_0 : Boot address based when Boot pin = 0
* @arg OPTIONBYTE_BOOTADDR_1 : Boot address based when Boot pin = 1
*
* @retval uint32_t Boot Base Address:
* - OB_BOOTADDR_ITCM_RAM : Boot from ITCM RAM (0x00000000)
* - OB_BOOTADDR_SYSTEM : Boot from System memory bootloader (0x00100000)
* - OB_BOOTADDR_ITCM_FLASH : Boot from Flash on ITCM interface (0x00200000)
* - OB_BOOTADDR_AXIM_FLASH : Boot from Flash on AXIM interface (0x08000000)
* - OB_BOOTADDR_DTCM_RAM : Boot from DTCM RAM (0x20000000)
* - OB_BOOTADDR_SRAM1 : Boot from SRAM1 (0x20010000)
* - OB_BOOTADDR_SRAM2 : Boot from SRAM2 (0x2004C000)
*/
static uint32_t FLASH_OB_GetBootAddress(uint32_t BootOption)
{
uint32_t Address = 0;
/* Return the Boot base Address */
if(BootOption == OPTIONBYTE_BOOTADDR_0)
{
Address = FLASH->OPTCR1 & FLASH_OPTCR1_BOOT_ADD0;
}
else
{
Address = ((FLASH->OPTCR1 & FLASH_OPTCR1_BOOT_ADD1) >> 16);
}
return Address;
}
/**
* @}
*/
#endif /* HAL_FLASH_MODULE_ENABLED */
/**
* @}
*/
/**
* @}
*/
/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/
